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| Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 360B - 05, STYLE 1 NI - 360 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, + 15 159 0.91 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 1.1 Unit C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MRF9060LR1 1 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power -- 60 Watts PEP Power Gain -- 17 dB Efficiency -- 40% IMD -- - 31 dBc * Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Features * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRF9060LR1 Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.9 3.7 0.17 5.3 4 -- 0.4 -- Vdc Vdc Vdc S Ciss Coss Crss -- -- -- 98 50 2 -- -- -- pF pF pF (continued) MRF9060LR1 2 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 16 17 -- dB Symbol Min Typ Max Unit Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) 36 40 -- % IMD -- - 31 - 28 dBc IRL -- - 16 -9 dB Gps -- 17 -- dB -- 39 -- % IMD -- - 31 -- dBc IRL -- - 16 -- dB P1dB -- 70 -- W Gps -- 17 -- dB -- 51 -- % MRF9060LR1 RF Device Data Freescale Semiconductor 3 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN VGG C6 RF INPUT B1 + C7 L1 C4 C9 Z10 Z1 C1 Z2 Z3 Z4 C2 Z5 Z6 Z7 C3 Z8 C5 Z9 DUT Z11 Z12 Z13 L2 B2 + C13 C15 + C16 + C17 RF OUTPUT VDD Z14 Z15 Z16 C14 Z17 C8 C10 C11 C12 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.180 x 0.270 Microstrip 0.350 x 0.270 Microstrip 0.270 x 0.520 x 0.140 Taper 0.170 x 0.520 Microstrip 0.410 x 0.520 Microstrip 0.060 x 0.520 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.360 x 0.270 Microstrip 0.060 x 0.270 Microstrip 0.110 x 0.060 Microstrip 0.330 x 0.060 Microstrip 0.230 x 0.060 Microstrip 0.740 x 0.060 Microstrip 0.130 x 0.060 Microstrip 0.340 x 0.060 Microstrip Taconic RF - 35- 0300, 30 mil, r = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic Table 5. 945 MHz Broadband Test Circuit Component Designations and Values Part B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8- 8.0 Gigatrim Variable Capacitors 10 pF Chip Capacitors 10 mF, 35 V Tantalum Chip Capacitor 3.0 pF Chip Capacitor 0.5 pF Chip Capacitor (MRF9060) 0.7 pF Chip Capacitor (MRF9060S) 220 mF Electrolytic Chip Capacitor 12.5 nH Inductors Description Part Number 2743019447 2743029446 ATC100B470JT500XT 27291SL ATC100B100JT500XT T491D106K035AT ATC100B3R0JT500XT ATC100B0R5BT500XT ATC100B0R7BT500XT MCAX63V227M13X22 A04T- 5 Manufacturer Fair- Rite Fair- Rite ATC Johanson ATC Kemet ATC ATC ATC Multicomp Coilcraft MRF9060LR1 4 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN C6 C17 VGG B1 B2 C7 C13 L1 C4 WB1 CUT OUT AREA C3 C5 WB2 C8 C9 C10 L2 VDD C15 C16 C14 C11 C12 OUTPUT INPUT C1 C2 MRF9060 900 MHz Rev-02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MRF9060LR1 RF Device Data Freescale Semiconductor 5 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 IRL 11 10 930 935 940 945 950 f, FREQUENCY (MHz) 955 -36 -38 960 IMD Gps h VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two-Tone Measurement, 100 kHz Tone Spacing 50 45 40 35 -30 -32 -34 -10 -12 -14 -16 -18 IRL, INPUT RETURN LOSS (dB) Figure 3. Class AB Broadband Circuit Performance IDQ = 650 mA IMD, INTERMODULATION DISTORTION (dBc) 18 17.5 G ps , POWER GAIN (dB) -20 -25 -30 IDQ = 275 mA -35 -40 -45 -50 -55 -60 450 mA 650 mA 500 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 500 mA 17 16.5 16 275 mA 15.5 15 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 450 mA 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 0 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 3rd Order -40 -50 5th Order -60 -70 0.1 7th Order 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 20 18 Gps, POWER GAIN (dB) 16 14 12 10 8 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 h Gps 60 50 40 30 20 10 0 h, DRAIN EFFICIENCY (%) Figure 6. Intermodulation Distortion Products versus Output Power MRF9060LR1 6 Figure 7. Power Gain and Efficiency versus Output Power RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Gps h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 16 Gps, POWER GAIN (dB) 14 h 12 10 8 6 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 60 40 20 0 -20 -40 -60 IMD 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 8. Power Gain, Efficiency, and IMD versus Output Power MRF9060LR1 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Zo = 5 Zsource f = 930 MHz Zload f = 960 MHz f = 960 MHz f = 930 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource 0.80 - j0.10 0.80 - j0.05 0.81 - j0.10 Zload 2.08 - j0.65 2.07 - j0.38 2.04 - j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 8 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF (FLANGE) 2X B 2 D bbb M T A 2X M K (LID) B M R ccc N ccc M M TA M B M (LID) TA C M B M H F E (INSULATOR) S T (INSULATOR) SEATING PLANE aaa TA M M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A A CASE 360B - 05 ISSUE G NI - 360 MRF9060LR1 MRF9060LR1 RF Device Data Freescale Semiconductor 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN 3 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision 11 Date Sept. 2008 Description * Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 4 * Added Product Documentation and Revision History, p. 10 MRF9060LR1 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or +1 - 303- 675- 2140 Fax: +1 - 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9060LR1 Document Number: RF Device Data MRF9060 - 2 Rev. 11, 9/2008 Freescale Semiconductor 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN |
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